pnp 2n2907 ? 2N2907A comset semiconductors 1/3 general purpose amplifiers transistors the 2n2907 and 2N2907A are pnp transistors mounted in to-18 metal package with the collector connected to the case . they are primarily intended for high speed switching. npn complements are 2n2222 and 2n2222a . compliance to rohs absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage 2N2907A -60 v 2n2907 -40 v cbo collector-base voltage 2N2907A -60 v 2n2907 -60 v ebo emitter-base voltage 2N2907A -5 v 2n2907 -5 i c collector current 2N2907A -600 ma 2n2907 p d total power dissipation @ t amb = 25 2N2907A 0.4 watts 2n2907 p d total power dissipation @ t case = 25 2N2907A 1.8 watts 2n2907 t j junction temperature 2N2907A 200 c 2n2907 t stg storage temperature range 2N2907A -65 to +200 c 2n2907 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient in free air 2N2907A 350 k/w 2n2907 r thj-c thermal resistance, junction to case 2N2907A 146 k/w 2n2907
pnp 2n2907 ? 2N2907A 16/10/2012 comset semiconductors 3/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb =-50 v, i e =0 2N2907A - - -10 na 2n2907 - - -20 i cbo collector cutoff current v cb =-50 v, i e =0 t j =150c 2N2907A - - -10 a 2n2907 - - -20 i cex collector cutoff current v ce =-30 v v be =0.5v 2N2907A - - -50 na 2n2907 v ceo collector emitter breakdown voltage i c =-10 ma i b =0 2N2907A -60 - - v 2n2907 -40 - - v cbo collector base breakdown voltage i c =-10 a i e =0 2N2907A -60 - - v 2n2907 -60 - - v ebo emitter base breakdown voltage i e =-10 a i c =0 2N2907A -5 - - v 2n2907 -5 - - h fe dc current gain (*) i c =-0.1 ma v ce =-10 v 2N2907A 75 - - - 2n2907 i c =-1 ma v ce =-10 v 2N2907A 100 - - 2n2907 i c =-10 ma v ce =-10 v 2N2907A 100 - - 2n2907 i c =-150 ma v ce =-10 v 2N2907A 100 - 300 2n2907 i c =-500 ma v ce =-10 v 2N2907A 50 - - 2n2907 30 - - v ce(sat) collector-emitter saturation voltage (*) i c =-150 ma i b =-15 ma 2N2907A - - -0.4 v 2n2907 - - -0.4 i c =-500 ma i b =-50 ma 2N2907A - - -1.6 2n2907 - - -1.6 v be(sat) base-emitter saturation voltage (*) i c =-150 ma i b =-15 ma 2N2907A - - -1.3 2n2907 - - -1.3 i c =-500 ma i b =-50 ma 2N2907A - - -2.6 2n2907 - - -2.6
pnp 2n2907 ? 2N2907A 16/10/2012 comset semiconductors 3/3 symbol ratings test condition(s) min typ max unit f t transition frequency i c =-50 ma v ce =-20 v f= 100mhz 2N2907A 200 - - mhz 2n2907 200 - - t d delay time i c =-150 ma i b =-15 ma -v cc =-30 v 2N2907A - - 10 ns t r rise time 2n2907 - - 40 c c collector capacitance i e = i e = 0 v cb =-10 v f = 100khz 2N2907A - - 8 pf 2n2907 c e emitter capacitance i c = i c = 0 v eb =-0.5 v f = 100khz 2N2907A - - 30 pf 2n2907 (*) pulse conditions : tp < 300 s, =2% mechanical data case to-18 revised august 2012 ????????? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? www.comsetsemi.com info@comsetsemi.com use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset semiconductors make s no warranty, representation or guarantee regarding the suitability of its products for any particular dimensions (mm) min max a 12.7 - b - 0.49 c 0.9 - d - 5.3 e - 4.9 f - 5.8 g 2.54 - h - 1.2 i - 1.16 l 45 - pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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